Title :
LightMOS a new power semiconductor concept dedicated for lamp ballast application
Author :
Griebl, Erich ; Lorenz, Leo ; Pürschel, Marco
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
With the monolithic integration of a body diode into an IGBT structure, a very cost attractive solution for the lamp ballast application is introduced. Using the trench stop technology for lowest tail currents, switching losses and the overall power losses of the device are in the range of the latest MOSFET technologies using the compensation principle for lowest on state resistances.
Keywords :
electric resistance; insulated gate bipolar transistors; isolation technology; lamp accessories; losses; power semiconductor diodes; IGBT structure; LightMOS; body diode; compensation principle; lamp ballast application; lowest tail currents; monolithic integration; on state resistances; power losses; power semiconductor; switching losses; trench stop; Costs; Electronic ballasts; Insulated gate bipolar transistors; Lamps; MOSFET circuits; Monolithic integrated circuits; Power MOSFET; Semiconductor diodes; Switching loss; Tail;
Conference_Titel :
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN :
0-7803-7883-0
DOI :
10.1109/IAS.2003.1257610
