Title :
InP-based HFETs and RTDs for high speed digital circuitry
Author :
Prost, W. ; Auer, U. ; Pacha, C. ; Brennemann, A. ; Janssen, G. ; Bertenburg, R.M. ; Brockerhoff, W. ; Bushehri, E. ; Goser, K.F. ; Tegude, F.-J.
Author_Institution :
Dept. of Solid State Electron., Gerhard-Mercator-Univ., Duisburg, Germany
fDate :
29 Sep-2 Oct 1998
Abstract :
An InP-based HFET technology for monolithically integrated high speed digital circuits is described. A novel logic gate configuration is presented based on depletion mode HFETs using a nonlinear negative feedback for high speed operation. A possible implementation of enhancement mode transistors and the promising combination with a low-peak voltage RTD is also presented. A preliminary investigation on manufacturability of RTDs is given. We report on the realisation of RTD/E-HFET on InP as a building block for digital circuits and its applicability to a novel circuit architecture (multiple input threshold logic)
Keywords :
III-V semiconductors; circuit feedback; field effect digital integrated circuits; high-speed integrated circuits; indium compounds; resonant tunnelling diodes; threshold logic; III-V semiconductors; InP; circuit architecture; depletion mode HFETs; enhancement mode transistors; high speed digital circuitry; logic gate configuration; low-peak voltage RTD; multiple input threshold logic; nonlinear negative feedback; Digital circuits; HEMTs; Indium phosphide; Integrated circuit technology; Logic circuits; Logic gates; MODFETs; Manufacturing; Negative feedback; Voltage;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738034
