Title :
VLSI integration of SiGe epitaxial base bipolar transistors
Author :
Mouis, M. ; Chantre, A.
Author_Institution :
France Telecom, CNET, Meylan, France
fDate :
29 Sep-2 Oct 1998
Abstract :
This paper presents the state of the art concerning integrated Si/Si1-xGex/Si heterojunction bipolar transistors (SiGe HBTs), with special emphasis on what are the real strong points of the device, once integration constraints have been accounted for. A review of some representative technologies is given, with a tentative classification according to the tradeoff which has been chosen between performance, integrability and process complexity. Examples of low-cost integration of SiGe HBTs in an industrial BiCMOS technology are provided as an illustration
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; VLSI; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; Si-SiGe-Si; VLSI; heterojunction bipolar transistors; industrial BiCMOS technology; integrability; low-cost integration; process complexity; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitance; Doping; Germanium silicon alloys; Heterojunctions; Radio frequency; Silicon germanium; Very large scale integration;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738035
