DocumentCode
2454212
Title
SIMMWIC: the impact of SiGe
Author
Luy, J.-F.
Author_Institution
Res. Center, Daimler-Benz AG, Ulm, Germany
fYear
1998
fDate
29 Sep-2 Oct 1998
Firstpage
83
Lastpage
88
Abstract
This paper discusses the performance of Silicon Millimeter Wave Integrated Circuits and possible improvements by SiGe heterostructure device concepts. It is shown, that Schottky and transit time diodes in homojunction silicon already exhibit a good performance. An improvement by SiGe is not yet proven for these devices. Silicon based transistors for 20 to 40 GHz operation frequencies require heterojunction concepts (SiGe HBT) as well as novel concepts for even faster devices
Keywords
Ge-Si alloys; MIMIC; elemental semiconductors; semiconductor materials; silicon; 20 to 40 GHz; SIMMWIC; Schottky diode; Si; SiGe; SiGe HBT; SiGe heterostructure device; silicon homojunction device; silicon millimeter wave integrated circuit; silicon transistor; transit time diode; Attenuation; Germanium silicon alloys; Microstrip; Millimeter wave devices; Millimeter wave technology; Millimeter wave transistors; Schottky diodes; Semiconductor diodes; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location
Pisa
Print_ISBN
0-7803-4900-8
Type
conf
DOI
10.1109/ISSSE.1998.738043
Filename
738043
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