Silicon technologies and circuits for analogue and digital applications up to 50 GHz

Author

Treitinger, Ludwig

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

fYear

1998

fDate

29 Sep-2 Oct 1998

Firstpage

89

Lastpage

90

Abstract

The very rapid progress of CMOS developments in the last two decades has extended the potential of MOS into applications traditionally covered by other IC technologies such as silicon bipolar or BICMOS on the one hand or III-V-FETs on the other hand. These applications include data and signal processing as well as RAMs. However, the progress of mainstream CMOS has at the same time pushed bipolar technology to very-high performance as needed for the upcoming applications like wireless and ultimate-speed networks

Keywords

MIMIC; elemental semiconductors; integrated circuit technology; silicon; 50 GHz; CMOS technology; RAM; RF IC; Si; analogue circuit; bipolar technology; data processing; digital circuit; signal processing; silicon technology; ultimate-speed network; wireless network; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Costs; Land mobile radio; Microelectronics; Monolithic integrated circuits; Radio frequency; Silicon; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Conference_Location

Pisa

Print_ISBN

0-7803-4900-8

Type

conf

DOI

10.1109/ISSSE.1998.738044

Filename

738044