Title :
Advanced SOI CMOS technology for RF applications
Author :
Demeûs, L. ; Chen, J. ; Eggermont, J.-P. ; Gillon, R. ; Raskin, J.-P. ; Vanhoenacker, D. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fDate :
29 Sep-2 Oct 1998
Abstract :
Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a fT of 1.1 GHz and φM of 30°, and two CMOS mixers with exceptional linearity results
Keywords :
CMOS integrated circuits; MMIC mixers; integrated circuit technology; land mobile radio; operational amplifiers; silicon-on-insulator; transceivers; 0.75 micron; 1 V; 1.1 GHz; 30 GHz; CMOS mixers; CMOS transceivers; RF applications; SHF; SOI transistors; advanced SOI CMOS technology; high-frequency amplifiers; linearity results; low-voltage low-power RF applications; microwave integrated circuits; microwave mixers; mobile communications; nMOSFET; nickel salicide process; single stage OTA; CMOS technology; MOSFET circuits; Power MOSFET; Power supplies; Radio frequency; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Thin film devices; Transistors;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738053
