Title :
Carrier transport and stress engineering in advanced nanoscale MOS transistors
Author :
Uchida, Ken ; Saitoh, Masumi
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Sub-band structure engineering to enhance mobility as well as ballistic current is also examined.
Keywords :
MOSFET; ballistic transport; band structure; carrier mobility; nanotechnology; advanced nanoscale MOS transistors; ballistic current; bulk (100) MOSFET; bulk (110) MOSFET; carrier mobility; carrier transport; stress engineering; subband structure; Compressive stress; Effective mass; Electron mobility; FETs; Large scale integration; Light scattering; MOSFETs; Optical scattering; Phonons; Power engineering and energy;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159267
