Title :
Phonon dispersion in gallium nitride
Author :
Demangeot, F. ; Frandon, J. ; Renucci, M.A. ; Beaumont, B. ; Gibart, P.
Author_Institution :
Lab. de Phys. des Solides, Univ. Paul Sabatier, Toulouse, France
fDate :
29 Apr-3 May 1996
Abstract :
GaN layers grown on sapphire (0001) substrates were studied at room temperature by Raman Spectroscopy. Directional dependance of frequency and polarization properties of the extraordinary modes, resulting from the anisotropic wurtzite, was evidenced by macro- and micro-Raman measurements. Second order Raman spectra were recorded and their completely symmetric component was analyzed in terms of phonon density of states. Due to the lack of phonon spectrum calculations, use was made of available q-dispersion curves of the closely related ZnO compound for phonon assignment
Keywords :
III-V semiconductors; Raman spectra; gallium compounds; phonon dispersion relations; phonon spectra; semiconductor epitaxial layers; GaN; GaN layers; Raman spectroscopy; anisotropic wurtzite; directional dependance; extraordinary modes; frequency properties; phonon assignment; phonon density of states; polarization properties; q-dispersion curves; Anisotropic magnetoresistance; Frequency measurement; Gallium nitride; III-V semiconductor materials; Phonons; Polarization; Raman scattering; Spectroscopy; Temperature; Zinc oxide;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570889
