Title :
Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory
Author :
Rajendran, B. ; Breitwisch, M. ; Cheek, R. ; Lee, M.-H. ; Shih, Y.-H. ; Lung, H.-L. ; Lam, C.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate poly-silicon emitter vertical PNP bipolar junction transistors (BJTs) that could be used as access devices for phase change memory. The device arrays fabricated using a 180 nm BiCMOS process exhibit current drive capability in excess of 10 mA/mum2, on-off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density phase change memory technology.
Keywords :
BiCMOS memory circuits; bipolar memory circuits; bipolar transistor circuits; elemental semiconductors; phase change memories; silicon; BiCMOS process; Si; access device; bipolar junction transistor; high-density PCM; phase change memory; polysilicon emitter BJT; size 180 nm; BiCMOS integrated circuits; Current measurement; FETs; Foot; Gain measurement; Lungs; Phase change materials; Phase change memory; Phase change random access memory; Semiconductor diodes; NV memory; PCRAM; poly-emitter BJTs;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159278
