• DocumentCode
    2454849
  • Title

    A novel concept for first-pass design of RF Power amplifiers for wireless communications

  • Author

    Ma, Rui ; Kompa, Günter ; Bangert, Aexl

  • Author_Institution
    CTO Res., Nokia Siemens Networks, Beijing, China
  • fYear
    2011
  • fDate
    25-28 Sept. 2011
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    In this paper, a novel RF circuit design concept, namely, Partitioning Design Approach (PDA) is proposed. In comparison with the conventional RF circuit design approach, it is aimed to accomplish the complex RF circuit design tasks in a straightforward way. As a demonstrator, one class-AB RF power amplifier (PA) was designed at the centre frequency of 2.14 GHz using AlGaAs/GaAs HEMT technology. Finally, excellent agreement between the real measured RF performance and the expected simulation results has been achieved without iterative and tedious post-fabrication tuning work; the feasibility of the PDA for obtaining first-pass success in RF PA realization has been demonstrated successfully.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; power amplifiers; AlGaAs-GaAs; HEMT technology; RF circuit design; class-AB RF power amplifier; first-pass design; frequency 2.14 GHz; partitioning design approach; post-fabrication tuning work; wireless communications; Integrated circuit interconnections; Integrated circuit reliability; Power amplifiers; Power measurement; Radio frequency; Scattering parameters; First-pass success design; Partitioning Design Approach; RF Power Amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Technology and Applications (ISWTA), 2011 IEEE Symposium on
  • Conference_Location
    Langkawi
  • Print_ISBN
    978-1-4577-1496-2
  • Type

    conf

  • DOI
    10.1109/ISWTA.2011.6089542
  • Filename
    6089542