Title :
Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure
Author :
Rahaman, S.Z. ; Maikap, S. ; Lin, C.H. ; Wu, T.Y. ; Chen, Y.S. ; Tzeng, P.J. ; Chen, F. ; Lai, C.S. ; Kao, M.J. ; Tsai, M.J.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Low current/voltage (~10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1 mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3times107, good endurance of >103 cycles, and excellent retention (>11 hours) with resistance ratio of > 9times103 can be useful in future non-volatile memory applications.
Keywords :
copper; random-access storage; tantalum compounds; tungsten; Cu-Ta2O5-W; current 10 nA to 1 mA; data storage; low current memory device; voltage resistive switching memory device; CMOS technology; Electrodes; Electronics industry; Industrial electronics; Low voltage; Nonvolatile memory; Scalability; Solids; Sputtering; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159279
