DocumentCode
2454870
Title
Characterization and modeling of the LPT CSTBT-the 5th generation IGBT
Author
Kang, X. ; Lu, L. ; Wang, X. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R. ; Donlon, J.F.
Author_Institution
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Volume
2
fYear
2003
fDate
12-16 Oct. 2003
Firstpage
982
Abstract
The 5th generation IGBT device, carrier stored trench bipolar transistor (CSTBT), has been introduced in the market. This newer generation IGBT represents the current state of the art with its excellent electrical characteristics. In this work, the physics-based electro-thermal Leturcq-Palmer IGBT model, which has been proven robust by the validation with NPT and PT IGBTs, is used to simulate the behavior of the CSTBT. The hard switching experiments have been performed using inductive and resistive loads under different temperature conditions. The simulation results from the model are compared with the experimental results under different conditions to validate the model accuracy.
Keywords
insulated gate bipolar transistors; isolation technology; load (electric); power semiconductor switches; semiconductor device models; 5th generation IGBT; LPT CSTBT; carrier stored trench bipolar transistor; electrical characteristics; electro-thermal Leturcq-Palmer IGBT model; hard switching; inductive loads; resistive loads; state of the art; temperature conditions; Analytical models; Bipolar transistors; Character generation; Circuit simulation; Conductivity; Insulated gate bipolar transistors; Power engineering and energy; Power generation; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN
0-7803-7883-0
Type
conf
DOI
10.1109/IAS.2003.1257658
Filename
1257658
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