Title :
Physical modeling of IGBT turn on behavior
Author :
Kang, X. ; Wang, X. ; Lu, L. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. Under clamped inductive load condition at turn on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. A physics-based IGBT model is used that has been proved accurate in the simulation of IGBT turn off. Both resistive and inductive turn on are considered. Discrepancies between model predictions and experimental results are discussed.
Keywords :
insulated gate bipolar transistors; load (electric); losses; power semiconductor diodes; semiconductor device models; IGBT turn on behavior; IGBT turn on losses; clamped inductive load; freewheeling diode; inductive turn on; physics-based IGBT model; resistive turn on; reverse recovery; Analytical models; Character generation; Circuit simulation; Diodes; Electric variables; Equivalent circuits; Insulated gate bipolar transistors; Predictive models; Switching converters; Tail;
Conference_Titel :
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN :
0-7803-7883-0
DOI :
10.1109/IAS.2003.1257659
