Title :
A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory
Author :
Liu, C.H. ; Lin, Y.M. ; Sakamoto, Y. ; Yang, R.J. ; Yin, D.Y. ; Chiang, P.J. ; Wei, H.C. ; Ho, C.Y. ; Chen, S.H. ; Hwang, H.P. ; Hung, C.H. ; Pittikoun, S. ; Aritome, S.
Author_Institution :
Powerchip Semicond. Corp., Hsinchu, Taiwan
Abstract :
Multinitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program voltage reduction owing to 10 A EOT (equivalant oxide thickness ) reduction (2) More than 20% tighter cell Vt distribution width can be achieved from ONO bird´s beak free due to supressing encroachment of gate re-oxidation by floating gate (FG) / top oxide nitridation. And also, (3) good data retention can be realized by applying plasma oxidation on bottom oxide to suppress the trap assisted charge loss. MN-ONO is a promising technology for high density NAND Flash beyond 40 nm generation.
Keywords :
NAND circuits; flash memories; NAND Flash memory; equivalent oxide thickness reduction; floating gate; multinitridation ONO interpoly dielectric; plasma oxidation; size 40 nm; top oxide nitridation; trap assisted charge loss; Degradation; Dielectric substrates; Electron emission; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Oxidation; Plasma applications; Plasma density; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159280
