Title :
Dynamic behaviour and ruggedness of advanced fast switching IGBTs and diodes
Author :
Mauder, A. ; Laska, T. ; Lorenz, L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The paper presents the latest developments of IGBTs and fast switching diodes. A detailed investigation of repetitive short circuit behaviour of the trench and field stop IGBT is discussed. The new field stop IGBT was developed with almost MOS-like (tail-less) turn-off behaviour. Driven by these new IGBT technologies an increased stress on the free wheeling diodes is exerted. The paper shows in detail the switching performance and electric stress of a diode turned off by an ultra-fast switching IGBT. Based on the internal processes during commutation requirements for the application are concluded.
Keywords :
commutation; insulated gate bipolar transistors; isolation technology; power semiconductor diodes; power semiconductor switches; switching; MOS-like turn-off behaviour; commutation requirements; diode electric stress; fast switching IGBT; fast switching diodes; field stop IGBT; free wheeling diodes stress; internal processes; repetitive short circuit behaviour; stray inductance; switching performance; tail-less turn-off behaviour; trench IGBT; ultra-fast switching IGBT; Circuits; Costs; Diodes; Home appliances; Ice; Insulated gate bipolar transistors; Power electronics; Robustness; Stress; Voltage;
Conference_Titel :
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN :
0-7803-7883-0
DOI :
10.1109/IAS.2003.1257660
