Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation

Author

Yu-Sheng Chen ; Wu, Tai-Yuan ; Tzeng, Pei-Jer ; Pang-Shiu Chen ; Lee, Heng-Yuan ; Lin, Cha-Hsin ; Chen, Pang-Shiu ; Tsai, Ming-Jinn

Author_Institution

Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst. Chutung, Hsinchu, Taiwan

fYear

2009

fDate

27-29 April 2009

Firstpage

37

Lastpage

38

Abstract

In this paper, the bipolar resistive switching memory using HfO₂ film with a TiN/Ti bi-layer electrode is reported. A robust endurance (>106 cycles) and long data retention (>10 years at 200degC) of this memory device was achieved. The memory also shows fast operation speed (~10 ns), low operation power and capability of multi-level operation.

Keywords

bipolar memory circuits; electrodes; hafnium compounds; low-power electronics; multilayers; random-access storage; titanium compounds; HfO₂-TiN-Ti; bi-layer electrode; bipolar RRAM device fabrication; bipolar resistive switching memory; forming-free resistive memory; high speed multilevel operation; high-density memory; low power consumption; CMOS technology; Circuit testing; Hafnium oxide; Industrial electronics; Materials science and technology; Oxidation; Robustness; Switches; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-2784-0

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2009.5159281

Filename

5159281