• DocumentCode
    2454912
  • Title

    Multi-level phase change memory using slow-quench operation: GST vs. GSST

  • Author

    Chao, Der-Sheng ; Chen, Chih-Wei ; Hsu, Yen-Ya ; Liu, Wen-Hsing ; Lee, Chain-Ming ; Chih-Wei Chen ; Wei-Su Chen ; Kao, Ming-Jer ; Tsai, Ming-Jinn

  • Author_Institution
    EOL, Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    27-29 April 2009
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge21Sn10Sb15Te54 (GSST) and Ge2Sb2Te5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed.
  • Keywords
    antimony compounds; crystallisation; germanium compounds; phase change memories; Ge21Sn10Sb15Te54; Ge2Sb2Te5; crystallization speed; phase change memory; slow-quench waveform; Amorphous materials; Chaos; Crystallization; Dielectrics; Electrical resistance measurement; Electrodes; Phase change materials; Phase change memory; Temperature measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-2784-0
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2009.5159282
  • Filename
    5159282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2454912