DocumentCode :
2454912
Title :
Multi-level phase change memory using slow-quench operation: GST vs. GSST
Author :
Chao, Der-Sheng ; Chen, Chih-Wei ; Hsu, Yen-Ya ; Liu, Wen-Hsing ; Lee, Chain-Ming ; Chih-Wei Chen ; Wei-Su Chen ; Kao, Ming-Jer ; Tsai, Ming-Jinn
Author_Institution :
EOL, Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2009
fDate :
27-29 April 2009
Firstpage :
39
Lastpage :
40
Abstract :
In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge21Sn10Sb15Te54 (GSST) and Ge2Sb2Te5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed.
Keywords :
antimony compounds; crystallisation; germanium compounds; phase change memories; Ge21Sn10Sb15Te54; Ge2Sb2Te5; crystallization speed; phase change memory; slow-quench waveform; Amorphous materials; Chaos; Crystallization; Dielectrics; Electrical resistance measurement; Electrodes; Phase change materials; Phase change memory; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2009.5159282
Filename :
5159282
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2454912
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