Title :
Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements
Author :
Frey, D. ; Schanen, Jl ; Augé, JL ; Lesaint, O.
Author_Institution :
Lab. d´´Electrotechnique, Univ. Joseph Fourier, Grenoble, France
Abstract :
The development of high voltage power module using IGBTs leads to serious problems concerning the electric field insulation. The values of these electric fields are very important regarding the capabilities of the dielectric gels used in the power packages. Solutions have to be developed to ensure limited field and good reliability. The aim of this paper is to show the interest of using finite element simulations in association with partial discharge measurements to determine and localize the maximum field values. Some solutions to lower them are also presented.
Keywords :
dielectric materials; electric fields; finite element analysis; gels; insulated gate bipolar transistors; insulation; modules; partial discharge measurement; semiconductor device reliability; 5 kV; dielectric gels; electric field insulation; electric fields; finite element simulations; high voltage power modules; partial discharge measurements; power packages; Dielectric materials; Dielectrics and electrical insulation; Electric variables measurement; Finite element methods; Insulated gate bipolar transistors; Multichip modules; Partial discharge measurement; Partial discharges; Power measurement; Voltage;
Conference_Titel :
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN :
0-7803-7883-0
DOI :
10.1109/IAS.2003.1257662
