Title :
A VFB tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO2 for 32nm node and beyond
Author :
Petry, J. ; Boccardi, G. ; Singanamalla, R. ; Liu, C.S. ; Xiong, K. ; Escanes, P. ; Huguenin, J.L. ; Tseng, J. ; Van Nimwegen, L. ; Voogt, F. ; Bulle-Lieuwma, C.W.T. ; Müller, M.
Author_Institution :
NXP-TSMC Res. Center, Leuven, Belgium
Abstract :
Easily integrable cost effective gate first Single Metal Single Dielectric (SMSD) solution based on As implantation into TiN/HfO2 with ~1 nm EOT is presented. A consistent n-type shift of 250 mV down to 35 nm Lg is obtained by As I/I compared to the reference stack. Symmetrical threshold voltages (~ plusmn0.5 V) are met for the bulk planar devices using this technique, which would corresponds to low-VT (plusmn0.2 V) target for the FD FETs. The possible counter- doping effects were evaluated electrically and physically with backside SIMS. It was found to be negligible implying negligible concentration of As in the channel region. As I/I technique opens up possibility of multiple VT tuning without adding any process complexity.
Keywords :
arsenic; dielectric materials; field effect transistors; hafnium compounds; ion implantation; titanium compounds; FD FET; bulk planar devices; counter- doping effects; ion implantation; reference stack; size 32 nm; size 35 nm; tunable single metal single dielectric approach; voltage 250 mV; Channel bank filters; Costs; Degradation; Dielectrics; FETs; Gate leakage; Hafnium oxide; Implants; Threshold voltage; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159289
