The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET

Despite their excellent control of short channel effects, FinFETs suffer from different trade-offs in the mixed-signal domain, with respect to planar devices. For the first time, we report a complete and comprehensive comparative analysis showing that these trade-offs can be alleviated in advanced FinFET technology. As such, higher voltage gain and transconductance than planar MOSFETs are reached at the same time. V_T mismatch smaller than 3 mV.mum is obtained for narrow (10 nm) fins. Reduced speed sensitivity to gate pitch scaling and invertor delay reduced below 10 ps will be demonstrated.