Ultra low-loss high power AlGaN/GaN HFET switches

Novel design concepts and cutting edge results are presented for high-power AlGaN/GaN Heterostructure Field-Effect Transistor switches for power converters, control and radio-frequency applications. For power switching, the HFET design has to be different from that of power amplifiers in order to minimize the contact resistance and avoid current crowding in the metal electrodes of large-periphery devices. Developed high-power III-Nitride HFET switches have the ON-resistance less than 1.25 Omega for a 3-mm wide multi-finger device, equivalent to less then 0.4 mOmegacm² specific ON-resistance. New design and technology allows for low-loss power switching with above 1kV operating voltages, sub-nanosecond switching times, operating temperatures ranging from cryogenic up to 300degC and even higher.