FDSOI CMOS with dual backgate control for performance and power modulation

Author

Yau, Jeng-Bang ; Cai, Jin ; Shi, Leathen ; Dennard, Robert H. ; Kumar, Arvind ; Sactlger, K.L. ; Reznicek, Alexander ; Solomon, Paul M. ; Ouyang, Qiqingg ; Koester, Steven ; Haensch, W.E.

Author_Institution

IBM Semicond. R&D Center, IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2009

fDate

27-29 April 2009

Firstpage

84

Lastpage

85

Abstract

We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilitates an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100times with 30% increase of inverter delay. In addition, the inverter delay can be improved by 15% with 2times increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the backgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.

Keywords

CMOS integrated circuits; field effect transistors; oscillators; silicon-on-insulator; FDSOI CMOS; backgate voltages; buried oxide fully-depleted SOI; dual backgate control; leakage current; nFET; pFET; power modulation; ring oscillator; thin-BOX FD SOI; Added delay; CMOS process; CMOS technology; Inverters; Leakage current; Optimization; Ring oscillators; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-2784-0

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2009.5159302

Filename

5159302