Title :
Highly performant FDSOI pMOSFETs with metallic source/drain
Author :
Poiroux, T. ; Vinet, M. ; Nemouchi, F. ; Carron, Y. ; Morand, Yves ; Previtali, B. ; Descombes, S. ; Tosti, L. ; Cueto, O. ; Baud, L. ; Balan, V. ; Rivoire, M. ; Deleonibus, S. ; Faynot, O.
Author_Institution :
CEA-LETI/Minatec, Grenoble, France
Abstract :
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345 nA/mum and Ioff=30 nA/mum at -1 V for a 50 nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow specifific contact resistivities as low as 0.1 Omegam2.
Keywords :
MOSFET; silicon-on-insulator; FDSOI pMOSFET; metallic source-drain; size 50 nm; voltage -1 V; MOSFETs;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159304
