Title :
Test structure for IC(VBE) parameter determination of low voltage applications
Author :
Rahajandraibe, W. ; Dufaza, C. ; Auvergne, D. ; Cialdella, B. ; Majoux, B. ; Chowdhury, V.
Author_Institution :
LIRMM, Univ. de Montpellier II, France
Abstract :
The temperature dependence of the IC(VBE) relationship can be characterised by two parameters: EG and X TI. The classical method to extract these parameters consists in a "best fitting" from measured VBE(T) values, using least square algorithm at constant collector current. This method involves an accurate measurement of YBE voltage and an accurate value of the operating temperature. We propose in this paper, a configurable test structure dedicated to the extraction of temperature dependence of Ic(VBE) characteristic for BJT designed with bipolar or BiCMOS processes. This allows a direct measurement of die temperature and consequently an accurate measurement of VBE(T). First, the classical extraction method is explained. Then, the implementation techniques of the new method are discussed, the improvement of the design is presented
Keywords :
BiCMOS integrated circuits; bipolar integrated circuits; integrated circuit testing; least squares approximations; low-power electronics; network parameters; temperature distribution; BiCMOS processes; best fitting; bipolar processes; configurable test structure; constant collector current; die temperature; least square algorithm; low voltage applications; operating temperature; parameter determination; BiCMOS integrated circuits; Current measurement; Design methodology; Hip; Integrated circuit testing; Low voltage; Photonic band gap; Stability; Telephony; Temperature distribution;
Conference_Titel :
Design, Automation and Test in Europe Conference and Exhibition, 2002. Proceedings
Conference_Location :
Paris
Print_ISBN :
0-7695-1471-5
DOI :
10.1109/DATE.2002.998291
