Advances in spintronics devices for microelectronics — From spin-transfer torque to spin-orbit torque

Author

Fukami, Shunsuke ; Sato, Hikaru ; Yamanouchi, Masato ; Ikeda, Shoji ; Matsukura, Fumihiro ; Ohno, Hideo

Author_Institution

Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan

fYear

2014

fDate

20-23 Jan. 2014

Firstpage

684

Lastpage

691

Abstract

Recent advances in spintronics devices make it possible to open a new era of microelectronics. In this paper, we review the spintronics devices utilizing spin-transfer torques (STTs) and spin-orbit torques (SOTs) developed in recent years. The progresses of two-terminal STT device with CoFeB-MgO based magnetic tunnel junction (MTJ), three-terminal magnetic domain wall (DW) motion device with Co/Ni multilayer, and three-terminal SOT device with Cu-based channel are described. Integrated circuits with the developed spintronics devices are also reviewed.

Keywords

cobalt compounds; copper; integrated circuits; iron compounds; magnesium compounds; magnetoelectronics; nickel; Co-Ni; CoFeB-MgO; Cu; Integrated circuits; microelectronics; spin-orbit torques; spin-transfer torque; spintronics devices; three-terminal SOT device; two-terminal STT device; Magnetic tunneling; Magnetization; Magnetoelectronics; Nonvolatile memory; Switches; Thermal stability; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific

Conference_Location

Singapore

Type

conf

DOI

10.1109/ASPDAC.2014.6742970

Filename

6742970