An integrated 2 GHz 20 dBm 3 V wide band differential power amplifier with microstrip antenna interface

Author

Cartalade, David ; Senn, Patrice ; Pache, Denis ; Perea, Ernesto ; GHALI, Hany ; Fournier, Jean-Michel

Author_Institution

CNET, Meylan, France

fYear

1998

fDate

29 Sep-2 Oct 1998

Firstpage

456

Lastpage

459

Abstract

A highly efficient fully differential power amplifier (PA) for mobile terminals around 2 GHz is realized in 0.5 μm BiCMOS process. The commonly used interface baluns are replaced by a 180° microstrip power divider and combiner. A microstrip power combiner is used to match the differential output impedance of the power amplifier with the usual 50 Ω antenna load. A maximum output power of 20 dBm is obtained from a single 3 V power supply. The amplifier small signal gain is about 20 dB over a 1 GHz bandwidth. The power added efficiency (PAE) is 25%

Keywords

BiCMOS integrated circuits; UHF power amplifiers; cellular radio; differential amplifiers; impedance matching; microstrip antennas; power combiners; power dividers; wideband amplifiers; 0.5 micron; 1 GHz; 180° microstrip power combiner; 180° microstrip power divider; 2 GHz; 20 dB; 25 percent; 3 V; 50 ohm; BiCMOS process; UHF; antenna load; bandwidth; differential output impedance matching; digital cellular systems; integrated wide band differential power amplifier; maximum output power; microstrip antenna interface; mobile terminals; power added efficiency; power supply; small signal gain; BiCMOS integrated circuits; Differential amplifiers; High power amplifiers; Impedance matching; Loaded antennas; Microstrip antennas; Power amplifiers; Power combiners; Power dividers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Conference_Location

Pisa

Print_ISBN

0-7803-4900-8

Type

conf

DOI

10.1109/ISSSE.1998.738115

Filename

738115