Title :
Gate last MOSFET with air spacer and self-aligned contacts for dense memories
Author :
Park, Jemin ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET is the gate to contact-plug capacitance. This is especially so with SAC (self-aligned contact) technology popular with high density memories. This papers proposes a compact SAC gate-last air-spacer structure that yield small size, high speed, and low switching energy. The improvement over the conventional SAC device increases dramatically with scaling.
Keywords :
MOSFET; electrical contacts; air-spacer structure; contact-plug capacitance; gate last MOSFET; gate-last metal-gate-high-k technology; high density memories; low switching energy; self-aligned contact technology; Capacitance; Contacts; Delay effects; Etching; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Plugs; Random access memory; Space technology;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159312
