Title :
Analytical modeling of Accumulation-Mode Suspended-Gate MOSFET and process challenges for very low operating power devices
Author :
Collonge, M. ; Vinet, M. ; Ribeiro, M. ; Pedini, J.-M. ; Previtali, B. ; Ernst, T. ; Bécu, S. ; Ghibaudo, G.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130 muJ/m2 are required as well as sub-2.3 N/m doubly clamped gate. Experimentally a 0.2 N/m suspended silicon nanowire was processed, opening perspectives for device downscaling.
Keywords :
MOSFET; low-power electronics; nanoelectronics; nanowires; semiconductor device models; silicon; MOSFET model; Si; accumulation-mode suspended-gate MOSFET; adhesion energy; device downscaling; doubly clamped gate; suspended silicon nanowire; very low operating power device; Adhesives; Analytical models; Hafnium oxide; MOSFET circuits; Nanoscale devices; Power MOSFET; Silicon; Solid state circuits; Springs; Wet etching;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159315
