• DocumentCode
    2455590
  • Title

    Analytical modeling of Accumulation-Mode Suspended-Gate MOSFET and process challenges for very low operating power devices

  • Author

    Collonge, M. ; Vinet, M. ; Ribeiro, M. ; Pedini, J.-M. ; Previtali, B. ; Ernst, T. ; Bécu, S. ; Ghibaudo, G.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2009
  • fDate
    27-29 April 2009
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130 muJ/m2 are required as well as sub-2.3 N/m doubly clamped gate. Experimentally a 0.2 N/m suspended silicon nanowire was processed, opening perspectives for device downscaling.
  • Keywords
    MOSFET; low-power electronics; nanoelectronics; nanowires; semiconductor device models; silicon; MOSFET model; Si; accumulation-mode suspended-gate MOSFET; adhesion energy; device downscaling; doubly clamped gate; suspended silicon nanowire; very low operating power device; Adhesives; Analytical models; Hafnium oxide; MOSFET circuits; Nanoscale devices; Power MOSFET; Silicon; Solid state circuits; Springs; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-2784-0
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2009.5159315
  • Filename
    5159315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2455590