DocumentCode
2455701
Title
A novel double-gated nanowire TFT and investigation of its size dependency
Author
Chen, Wei-Chen ; Lin, Chuan-Ding ; Lin, Horng-Chih ; Huang, Tiao-Yuan
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
27-29 April 2009
Firstpage
121
Lastpage
122
Abstract
A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.
Keywords
elemental semiconductors; nanowires; plasma magnetohydrodynamics; plasma materials processing; semiconductor quantum wires; silicon; thin film transistors; Si; double-gated nanowire TFT; isotropic plasma etching; thin film transistor; threshold voltage modulation; Anisotropic magnetoresistance; Displays; Etching; Laboratories; Nanoscale devices; Plasma applications; Plasma devices; Textile industry; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-2784-0
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2009.5159320
Filename
5159320
Link To Document