Title :
Nano-particle emissions from Atomic Layer Deposition
Author :
Huo, Jingwan ; Yuan, Chris
Author_Institution :
Dept. of Mech. Eng., Univ. of Wisconsin, Milwaukee, WI, USA
Abstract :
ATOMIC Layer Deposition (ALD) is an enabling nanotechnology widely used for fabricating conformal, uniform and pin-hole free thin films which can be controlled precisely in nano-meter scale [1]. ALD can coat accurately on planar substrate as well as high aspect ratio surfaces [2]. Due to the advantages of ALD technology, in recent years ALD has been widely applied in many fields including semiconductors, solar cells, fuel cells, medical devices, sensors, etc. In the past decade, ALD has undergone rapid development toward large scale industrial applications [3]. However, ALD has significant sustainability issues which need to be fully investigated and improved prior to its industrial scale applications [4]. One of the most significant concerns of ALD is the potential nano-particle emissions from the ALD fabrication process which can cause both occupational and public health exposure risks as well as environmental impacts due to the unique properties of nano-particles.
Keywords :
atomic layer deposition; health hazards; nanofabrication; nanoparticles; occupational health; atomic layer deposition fabrication process; atomic layer deposition technology; conformal thin film; environmental impacts; fuel cells; high aspect ratio surfaces; large scale industrial applications; medical devices; nanometer scale; nanoparticle emissions; nanoparticle properties; nanotechnology; occupational health exposure risk; pin-hole free thin film; planar substrate; public health exposure risk; semiconductors; sensors; solar cells; uniform thin film; Atomic layer deposition; Mechanical engineering; Semiconductor device measurement; Size measurement; Temperature; Temperature measurement; Water;
Conference_Titel :
Sustainable Systems and Technology (ISSST), 2012 IEEE International Symposium on
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4673-2003-0
DOI :
10.1109/ISSST.2012.6228006