DocumentCode :
2455795
Title :
Sub-100µW low power operation of Vibrating Body FETs
Author :
Grogg, Daniel ; Ionescu, Adrian Mihai
Author_Institution :
Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear :
2009
fDate :
27-29 April 2009
Firstpage :
129
Lastpage :
130
Abstract :
This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2 MHz and 20 MHz with power consumption less than 100 muW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks.
Keywords :
Q-factor; field effect transistors; low-power electronics; wireless sensor networks; active resonators; frequency 2 MHz; frequency 20 MHz; quality factor; vibrating body field effect transistors; wireless sensor networks; Electrical resistance measurement; Energy consumption; FETs; Impedance; Nanoscale devices; Q factor; Resonance; Resonant frequency; Vibrations; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2009.5159324
Filename :
5159324
Link To Document :
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