DocumentCode
2455828
Title
High mobility SiGe shell-Si core omega gate pFETS
Author
Adhikari, Hemant ; Harris, Harlan R. ; Smith, Casey E. ; Yang, Ji-Woon ; Coss, Brian ; Parthasarathy, Srivatsan ; Nguyen, Bich-yen ; Patruno, Paul ; Krishnamohan, Tejas ; Cayrefourcq, Ian ; Majhi, Prashant ; Jammy, Raj
Author_Institution
AMD assignee, Austin, TX, USA
fYear
2009
fDate
27-29 April 2009
Firstpage
136
Lastpage
138
Abstract
Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial strain, while the external resistance in the two SiGe and Si omega FETs is comparable. Performance can further be improved by uniaxial compressive stress.
Keywords
Ge-Si alloys; field effect transistors; semiconductor materials; SiGe; epitaxial strain; external resistance; high mobility core omega gate pFET; uniaxial compressive stress; Compressive stress; Dielectric substrates; FETs; FinFETs; Germanium silicon alloys; Jamming; MOSFETs; Scattering; Silicon germanium; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
978-1-4244-2784-0
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2009.5159327
Filename
5159327
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