Title :
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
Author :
Chiu, H.C. ; Lin, T.D. ; Chang, P. ; Lee, W.C. ; Chiang, C.H. ; Kwo, J. ; Lin, Y.S. ; Hsu, Shawn S H ; Tsai, W. ; Hong, M.
Author_Institution :
Dept of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non dc-embedded current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of ~ 3.1 and 1.1 GHz (ALD-Al2O3) and of ~ 17.9 and 11.2 GHz (MBE-Al2O3/Ga2O3(Gd2O3)), respectively, have been obtained.
Keywords :
III-V semiconductors; MOSFET; alumina; gadolinium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; In0.53Ga0.47As-Al2O3-Ga2O3; N-MOSFETs; dc-embedded current gain cutoff frequency; drain currents; gate dielectrics; self-aligned inversion channel; transconductances; Aluminum oxide; Atomic layer deposition; Cutoff frequency; Dielectric materials; Epitaxial growth; Intrusion detection; MOSFET circuits; Molecular beam epitaxial growth; Physics; Radio frequency;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159329
