DocumentCode :
2456316
Title :
Full electro-thermal model of a 6.5kV field-stop IGBT module
Author :
Castellazzi, Alberto ; Batista, Emmanuel ; Ciappa, Mauro ; Dienot, Jean-Marc ; Mermet-Guyennet, Michel ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zurich
fYear :
2008
fDate :
15-19 June 2008
Firstpage :
392
Lastpage :
397
Abstract :
As the integration level of power electronics equipment increases, the coupling between multi-domain physical effects becomes more and more relevant for design optimization. At the same time, virtual analysis capability acquires a critical importance and is conditioned by the achievement of an adequate compromise between accuracy and computational effort. This paper proposes the compact model development of a 6.5 kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT and anti-parallel freewheeling diode pairs: the description of semiconductor physics is coupled with self-heating effects, both at device and module level; electro-magnetic phenomena associated with the package and layout are also taken into account. The modeling approach follows a mixed physical and behavioral description, resulting in an ideal compromise for realistic analysis of multi-chip structures. Finally, selected examples, derived from a railway traction application scenario, demonstrate the validity of the proposed solution, both for simulation of short transients and periodic operation, qualifying the model as a support tool of general validity, from system design development to reliability investigations.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; antiparallel freewheeling diode pairs; electro-thermal model; field-stop IGBT module; multichip structures; multidomain physical effects; power electronics equipment; railway traction application scenario; semiconductor physics; short transients; voltage 6.5 kV; Circuit simulation; Coupling circuits; Design optimization; Insulated gate bipolar transistors; Physics; Power electronics; Rail transportation; Semiconductor device packaging; Semiconductor diodes; System analysis and design; Insulated gate bipolar Transistors; Modeling; Multichip modules; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2008. PESC 2008. IEEE
Conference_Location :
Rhodes
ISSN :
0275-9306
Print_ISBN :
978-1-4244-1667-7
Electronic_ISBN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.2008.4591961
Filename :
4591961
Link To Document :
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