Title :
Comparison of NPT and PT IGBT-devices for hard switching applications
Author :
Blaabjerg, Frede ; Jaeger, Ulrik ; Munk-Nielsen, Stig ; Pedersen, John K.
Author_Institution :
Inst. of Energy Technol., Aalborg Univ., Denmark
Abstract :
Two main directions in the development of IGBTs are used in order to improve performance both statically and dynamically. One direction is punch-through (PT) technology with lifetime killers and low on-state losses. The other direction is nonpunch-through (NPT) technology which has a simpler device development process and lower switching losses. The NPT device has a high blocking capability while the PT is difficult to control during the device process for higher blocking voltages. This paper makes a detailed comparison between the PT and NPT devices for hard switching applications. The comparison is done by extended use of measurements on an advanced measurement system. Both static and dynamic measurements are carried out as well as nondestructive and destructive short circuits are performed. Static measurements are carried out on thirty devices from each technology while the dynamic measurements are done on five selected devices. It is concluded that the PT device has the best static performance at high temperature (125°C). The PT device has excellent turn-off performance at low temperature (25°C) while the NPT technology has the best turn-off performance at high temperature and it has, in general, the smallest device variation statically. The NPT device has also a superior short circuit capability both during single nondestructive short pulse tests and destructive short circuit tests. Finally, it is concluded that both device technologies have benefits and disadvantages and the choice of technology depends on the specific application
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; nondestructive testing; power bipolar transistors; power semiconductor switches; semiconductor device testing; semiconductor technology; switching circuits; 125 C; 25 C; IGBT; NDT; blocking capability; destructive testing; dynamic measurements; hard switching applications; high temperature; lifetime killers; low temperature; nonpunch-through technology; on-state losses; punch-through technology; short circuit capability; short circuits; static measurements; static performance; switching losses; turn-off performance; Circuit testing; Insulated gate bipolar transistors; Manufacturing processes; Performance evaluation; Power electronics; Power generation; Pulse circuits; Switching loss; Temperature; Voltage control;
Conference_Titel :
Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-1993-1
DOI :
10.1109/IAS.1994.377577
