DocumentCode
2457477
Title
Comparison of transient thermal parameters for different die connecting approaches
Author
Yin, Jian ; van Wyk, J.D. ; Odendaal, W.G. ; Liang, Zhenxian
Author_Institution
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
3
fYear
2003
fDate
12-16 Oct. 2003
Firstpage
1818
Abstract
This paper compares two die connecting approaches based on a simple experimental method, which can achieve accurate characterizations of transient and steady state die thermal parameters. This method, named thermal resistance analysis by an induced transient (TRAIT) method, uses the first n terms of the time-constant spectrum obtained from the cool-down temperature transient measurements to get the complete characterizations of a Cauer equivalent thermal network with n cells. The details of this method including the experimental setup, cool-down temperature recording, curve fitting of the temperature curve, and impedance decomposition are introduced. An improved TRAIT method is introduced. The Cauer equivalent thermal circuit of the embedded power die connecting approach using this method is obtained and compared to the equivalent circuit of wire-bond die connecting approach as a benchmark.
Keywords
lead bonding; power semiconductor devices; thermal analysis; thermal resistance measurement; thermal variables measurement; transient analysis; Cauer equivalent thermal network; cool-down temperature recording; cool-down temperature transient measurements; curve fitting; die connecting approaches; embedded power die connecting approach; equivalent circuit; impedance decomposition; power semiconductor devices; steady state die thermal parameters; temperature curve; thermal impedance; thermal resistance analysis by an induced transient; thermal transient measurement; time-constant spectrum; transient die thermal parameters; transient thermal parameters; wire-bond die connecting; Curve fitting; Electrical resistance measurement; Impedance; Integrated circuit interconnections; Joining processes; Steady-state; Temperature measurement; Thermal management; Thermal resistance; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN
0-7803-7883-0
Type
conf
DOI
10.1109/IAS.2003.1257801
Filename
1257801
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