Title :
Radiation sensor based on a floating gate device
Author :
Pikhay, E. ; Nemirovsky, Y. ; Roizin, Y. ; Dayan, V. ; Lavrenkov, K. ; Leibovich, Y. ; Epstein, D.
Author_Institution :
TowerJazz, Migdal-Haemek, Israel
Abstract :
Ionizing radiation sensor based on the nonvolatile floating gate (FG) C-Flash memory is demonstrated. The sensing is based on measuring the threshold voltage (Vt) shift of the modified C-Flash cell pre-charged by electrons or holes. The accumulated absorbed dose is calculated from the Vt shift of the memory cell after the exposure to radiation. The developed sensor is a candidate for embedding into passive RFID radiation measuring systems. It features ultra-low power operation and does not require power supply during the exposure sessions. The feasibility results for stand-alone sensors and 2kbit test arrays are presented and discussed in view of possible applications.
Keywords :
flash memories; ionisation; radiofrequency identification; radiofrequency measurement; accumulated absorbed dose; floating gate device-based radiation sensor; memory cell; modified C-flash cell precharging; nonvolatile FG C-flash memory; nonvolatile floating gate C-Flash memory; passive RFID radiation measuring systems; power supply; radiation exposure; radiation sensor ionization; stand-alone sensors; test arrays; threshold voltage shift measurement; ultra-low power operation; Capacitors; Logic gates; Nonvolatile memory; Sensitivity; NVM; floating gate; radiation sensor;
Conference_Titel :
Electrical & Electronics Engineers in Israel (IEEEI), 2012 IEEE 27th Convention of
Conference_Location :
Eilat
Print_ISBN :
978-1-4673-4682-5
DOI :
10.1109/EEEI.2012.6377101
