Radiation sensor based on a floating gate device

Author

Pikhay, E. ; Nemirovsky, Y. ; Roizin, Y. ; Dayan, V. ; Lavrenkov, K. ; Leibovich, Y. ; Epstein, D.

Author_Institution

TowerJazz, Migdal-Haemek, Israel

fYear

2012

fDate

14-17 Nov. 2012

Firstpage

1

Lastpage

4

Abstract

Ionizing radiation sensor based on the nonvolatile floating gate (FG) C-Flash memory is demonstrated. The sensing is based on measuring the threshold voltage (Vt) shift of the modified C-Flash cell pre-charged by electrons or holes. The accumulated absorbed dose is calculated from the Vt shift of the memory cell after the exposure to radiation. The developed sensor is a candidate for embedding into passive RFID radiation measuring systems. It features ultra-low power operation and does not require power supply during the exposure sessions. The feasibility results for stand-alone sensors and 2kbit test arrays are presented and discussed in view of possible applications.

Keywords

flash memories; ionisation; radiofrequency identification; radiofrequency measurement; accumulated absorbed dose; floating gate device-based radiation sensor; memory cell; modified C-flash cell precharging; nonvolatile FG C-flash memory; nonvolatile floating gate C-Flash memory; passive RFID radiation measuring systems; power supply; radiation exposure; radiation sensor ionization; stand-alone sensors; test arrays; threshold voltage shift measurement; ultra-low power operation; Capacitors; Logic gates; Nonvolatile memory; Sensitivity; NVM; floating gate; radiation sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Electronics Engineers in Israel (IEEEI), 2012 IEEE 27th Convention of

Conference_Location

Eilat

Print_ISBN

978-1-4673-4682-5

Type

conf

DOI

10.1109/EEEI.2012.6377101

Filename

6377101