Title :
Artificial neural network to statistically model the variation in small signal equivalent circuit model parameters for a Si/SiGe HBT process
Author :
Taber, H. ; Schreurs, D. ; Gillon, R. ; Vestiel, E. ; Alabadelah, A. ; van Niekerk, C. ; Nauwelaers, B.
Keywords :
Artificial neural networks; Distributed parameter circuits; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Intelligent networks; Predictive models; Scattering parameters; Signal processing; Silicon germanium;
Conference_Titel :
ARFTG Conference Digest Spring, 2004. 63rd
Print_ISBN :
0-7803-8371-0
DOI :
10.1109/ARFTG.2004.1387863
