Electrical and optical properties of Zn/sub x/Mg/sub 1-x/Se/ZnTe and Zn/sub x/Mg/sub 1-x/Se/GaAs heterojunctions

Author

Bala, W. ; Glowacki, G. ; Gapinski, A.

Author_Institution

Inst. of Phys., Copernicus (N.) Univ., Torun, Poland

fYear

1996

fDate

April 29 1996-May 3 1996

Firstpage

111

Lastpage

114

Abstract

This work deals with the study of the luminescence and electrical properties of Zn₁Mg_1-xSe epilayers grown by molecular-beam epitaxy on (001) GaAs and (111) ZnTe substrates. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth of exciton line from 2 meV in pure ZnSe layer grown on GaAs substrate to about 310 meV in Zn_0.68Mg_0.32Se. The band gap energy and lattice constant of Zn_xMg_1-xSe increase with Mg content as well

Keywords

II-VI semiconductors; III-V semiconductors; energy gap; excitons; lattice constants; magnesium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; spectral line breadth; zinc compounds; GaAs; Mg content; Zn/sub x/Mg/sub 1-x/Se/GaAs; Zn/sub x/Mg/sub 1-x/Se/ZnTe; ZnMgSe-GaAs; ZnMgSe-ZnTe; ZnTe; band gap energy; electrical properties; epilayers; exciton line; heterojunctions; lattice constant; linewidth; luminescence; molecular-beam epitaxy; optical properties; Excitons; Gallium arsenide; Lattices; Luminescence; Molecular beam epitaxial growth; Optical materials; Optical superlattices; Substrates; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse, France

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570911

Filename

570911