Title :
Device simulation of SiC-GTO
Author :
Sakata, Hiroshi ; Zahim, Muhamad
Author_Institution :
Dept. of Electr. Eng., Ehime Univ., Matsuyama, Japan
Abstract :
SiC (silicon carbide) material has been utilized for power devices, in order to achieve fast switching time and low switching loss. In this study, we use our FEM (finite element method) device simulator; and compare the switching waveforms of the usual Si-GTO (gate turn off thyristor) and new SiC-GTO. We also compare the switching waveforms of Si-HDGTO (hard driven GTO) and SiC-HDGTO. Results show that turn-off time and turn-off loss of SiC-GTO are decreased extremely and also much better on SiC-HDGTO
Keywords :
losses; power semiconductor switches; semiconductor device models; semiconductor materials; silicon compounds; switching circuits; thyristors; FEM device simulator; SiC; SiC material; fast switching time; finite element method device simulator; gate turn off thyristor; hard driven GTO; low switching loss; silicon carbide material; switching waveforms; turn-off loss; turn-off time; Charge carrier processes; Circuits; Current density; Differential equations; Electron mobility; Finite element methods; Nonlinear equations; Poisson equations; Silicon carbide; Thyristors;
Conference_Titel :
Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
Conference_Location :
Osaka
Print_ISBN :
0-7803-7156-9
DOI :
10.1109/PCC.2002.998551
