Title :
A statistical gate-delay model considering intra-gate variability
Author :
Okada, K. ; Yamaoka, Kento ; Onodera, Hidetoshi
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ., Japan
Abstract :
This paper proposes a model for calculating statistical gate-delay variation caused by intra-chip and inter-chip variability. As the variation of individual gate delays directly influences the circuit-delay variation, it is important to characterize each gate-delay variation accurately. Furthermore, as every transistor in a gate affects the transient characteristics of the gate, it is also necessary to consider the intra-gate variability in the model of gate-delay variation. This effect is not captured in existing statistical delay analyses. The proposed model considers the intra-gate variability through the introduction of sensitivity constants. The accuracy of the model is evaluated, and some simulation results for circuit delay variation are presented.
Keywords :
circuit simulation; constants; delay circuits; logic gates; response surface methodology; statistical analysis; RSM; circuit delay variation; circuit simulation; inter-chip variability; intra-chip variability; intra-gate variability; response surface method; sensitivity constants; statistical gate delay model; transient characteristics; CMOS integrated circuits; CMOS technology; Circuit simulation; Degradation; Delay effects; Fluctuations; Integrated circuit technology; Permission; Semiconductor device modeling; Timing;
Conference_Titel :
Computer Aided Design, 2003. ICCAD-2003. International Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
1-58113-762-1
DOI :
10.1109/ICCAD.2003.159782