Picosecond all-optical modulation in CdTe/CdZnTe multi-quantum wells under an applied electric field

Author

Grac, R. ; Pugnet, M. ; Magnea, N. ; Pautrat, J.L.

Author_Institution

CNRS, Toulouse, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

119

Lastpage

122

Abstract

We present single shot transmission experiments with 20 ps laser pulses. When a 10⁵ V/cm static electric field is applied on a CdTe/Cd_0.62Zn_0.38Te multiple quantum well, the optical transmission increases. At a 804 nm wavelength the enhancement factor is equal to 1.6. For a pulse intensity higher than 0.7 fJ μm ^-2, screening of the applied electric field occurs, restoring a zero-field transmission. These experiments imply that the screening rise time is shorter than 10 ps which results from weak confinement of the holes within the quantum wells

Keywords

II-VI semiconductors; cadmium compounds; electro-optical effects; electro-optical modulation; high-speed optical techniques; light transmission; nonlinear optics; semiconductor quantum wells; zinc compounds; 20 ps; 804 nm; CdTe-CdZnTe; CdTe/CdZnTe multi-quantum wells; applied electric field; enhancement factor; holes weak confinement; optical transmission; picosecond all-optical modulation; screening rise time; single shot transmission experiments; static electric field; zero-field transmission; Intensity modulation; Nonlinear optics; Optical buffering; Optical modulation; Optical pumping; Optical refraction; Optical variables control; Probes; Pulse modulation; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570916

Filename

570916