DocumentCode :
2460448
Title :
Characterization of RIE Induced Radiation Damage in Silicon Using Nondestructive Transverse Acoustoelectric Voltage Measurements
Author :
Tabib-Azar, M. ; Liu, T. ; Abedin, M.N. ; Das, P. ; Gilboa, H. ; Hata, W. ; Donnell, K. O´
fYear :
1984
fDate :
14-16 Nov. 1984
Firstpage :
926
Lastpage :
929
Keywords :
Capacitance-voltage characteristics; Cathodes; Dry etching; Fabrication; Ion beams; Magnetic fields; Silicon; Surface acoustic waves; Voltage measurement; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE 1984 Ultrasonics Symposium
Conference_Location :
Dallas, Texas, USA
Type :
conf
DOI :
10.1109/ULTSYM.1984.198438
Filename :
1535378
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2460448
