Title :
A multiple-valued algebra for modeling MOS VLSI circuits at switch-level
Author_Institution :
Dept. of Comput. Eng., Shanghai Inst. of Railways Technol., China
Abstract :
A multiple-valued algebra for modeling metal-oxide semiconductor very large-scale integration (MOS VLSI) circuits at switch-level is proposed. Its structure and properties are studied. This algebra can be used to transform an MOS digital circuit to a switch-level algebraic expression so as to generate the truth table for the circuit and to derive a Boolean expression for it. Methods for constructing a switch-level algebraic expression for a circuit and for simplifying expressions are given. This algebra provides a new tool for MOS VLSI circuit design and analysis
Keywords :
MOS integrated circuits; VLSI; logic testing; many-valued logics; semiconductor device models; Boolean expression; MOS VLSI circuits; MOS digital circuit; algebraic expression; modeling; multiple-valued algebra; switch-level; truth table; Boolean algebra; Circuit analysis; Digital circuits; Logic circuits; Logic functions; Low voltage; Rail transportation; Railway engineering; Switching circuits; Very large scale integration;
Conference_Titel :
Multiple-Valued Logic, 1989. Proceedings., Nineteenth International Symposium on
Conference_Location :
Guangzhou
Print_ISBN :
0-8186-1947-3
DOI :
10.1109/ISMVL.1989.37803
