DocumentCode :
2460490
Title :
Low energy implant throughput improvement by using the Arsenic dimer ion (As2+) on the Axcelis GSDIII/LED ion implanter
Author :
Kopalidis, P. ; Sohl, C. ; Freer, B.S. ; Arneen, M. ; Reece, R. ; Rathmell, M.
fYear :
2002
fDate :
27-27 Sept. 2002
Firstpage :
122
Lastpage :
125
Abstract :
Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion (As2+) for implant energies lower than 5 keV. Dimer implants require only half the dose and use twice the energy of equivalent As implants, resulting in significantly reduced implant times. Process results including Thermawave (TW), sheet resistance (Rs) and SIMS profiles show equivalence between As+ and As2+ implants.
Keywords :
CMOS integrated circuits; arsenic; ion implantation; secondary ion mass spectra; semiconductor doping; As2+; As2+ ion implantation; Axcelis GSDIII/LED ion implanter; SIMS profiles; beam current; low energy implant throughput improvement; process throughput; sheet resistance; ultra-shallow junctions; CMOS integrated circuits; Electrons; Implants; Ion implantation; Light emitting diodes; Particle beams; Plasma sources; Productivity; Thermal resistance; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
Type :
conf
DOI :
10.1109/IIT.2002.1257954
Filename :
1257954
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2460490
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