Title :
Thermal expansion coefficient and compressibility of single crystal silicon
Author :
Potulski, E. ; Nicolaus, R.A. ; Darnedde, H. ; Bonsch, G.
Author_Institution :
Physikalisch Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
Accurately known values of material properties for single crystals of silicon are necessary, to apply corrections in a planned high precision determination of Avogadro´s constant. Measurements of the coefficient of thermal expansion and of the compressibility of silicon are performed by interferometry in the range from vacuum to atmospheric pressure and from 15/spl deg/C to 25/spl deg/C.
Keywords :
Michelson interferometers; compressibility; constants; elemental semiconductors; light interferometry; silicon; thermal expansion; 15 to 25 degC; Avogadro´s constant; Si; compressibility; high precision determination; light interferometry; material properties; thermal expansion coefficient; Atmospheric measurements; Length measurement; Optical interferometry; Optical scattering; Performance evaluation; Pressure measurement; Silicon; Temperature measurement; Thermal expansion; Volume measurement;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547171
