DocumentCode :
246111
Title :
Comparison of photoconductive antenna performance on LT-GaAs and SI-GaAs substrates
Author :
Mingguang Tuo ; Jitao Zhang ; Min Liang ; Wei-Ren Ng ; Gehm, Michael E. ; Hao Xin
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Arizona, Tucson, AZ, USA
fYear :
2014
fDate :
6-11 July 2014
Firstpage :
167
Lastpage :
168
Abstract :
In this work, butterfly shaped photoconductive antennas (PCAs) on low-temperature grown (LT) GaAs and semi-insulating (SI) GaAs substrate as terahertz (THz) emitters are experimentally characterized and compared. Dependences of the THz radiated field on the applied DC bias voltage and laser pump power are compared. Quadratic DC bias dependence is seen for SI-GaAs PCA compared to a linear dependence for LT-GaAs PCA. Scaling rule can be applied to the laser power dependence to fit the measurement data and the saturation can be attributed to the screening effect. Studies of material property influence on THz radiated power allow exploration of ways to enhance PCA performance.
Keywords :
antennas; gallium arsenide; DC bias voltage; GaAs; LT-gallium arsenide substrates; PCA performance; SI-gallium arsenide substrates; THz emitters; THz radiated field; butterfly shaped photoconductive antennas; laser pump power; low-temperature grown gallium arsenide substrates; photoconductive antenna performance; quadratic DC bias dependence; screening effect; semiinsulating gallium arsenide substrates; terahertz emitters; the laser power dependence; Antennas; Gallium arsenide; Laser excitation; Measurement by laser beam; Power lasers; Principal component analysis; Pump lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location :
Memphis, TN
ISSN :
1522-3965
Print_ISBN :
978-1-4799-3538-3
Type :
conf
DOI :
10.1109/APS.2014.6904415
Filename :
6904415
Link To Document :
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