Title :
Deep level characterization of Ti and V doped Cd96%Zn 4%Te crystals for semi-insulating and photorefractive applications
Author :
Zerrai, A. ; Dammak, M. ; Bremond, G.
Author_Institution :
Lab. de Phys. de la Matiere, CNRS, Villeurbanne, France
fDate :
29 Apr-3 May 1996
Abstract :
The titanium (Ti) and vanadium (V) transition metal ions in Cd96%Zn4%Te crystals are studied by deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS). Two main electron traps at 0.83 eV and 0.95 eV were detected and characterized in CdZnTe:Ti and CdZnTe:V respectively. The level at 0.95 eV is related to V and is strongly involved in the photorefractive effect in CdZnTe:V. The level located at 0.83 eV in CdZnTe:Ti sample is formally identified to the Ti2+/Ti3+ simple donor level on the basis of its σn0 photoionization cross section interpretation. These two levels are shown to be of great importance to explain the compensation mechanism in Ti or V doped CdTe related crystals
Keywords :
II-VI semiconductors; deep level transient spectroscopy; electron traps; impurity states; photorefractive materials; titanium; vanadium; CdZnTe:Ti; CdZnTe:V; DLTS; Ti2+/Ti3+ simple donor level; compensation mechanism; deep level characterization; deep level optical spectroscopy; deep level transient spectroscopy; electron traps; photoionization cross section; photorefractive applications; semi-insulating applications; Crystals; Electron optics; Electron traps; Ionization; Particle beam optics; Photorefractive effect; Spectroscopy; Tellurium; Titanium; Zinc;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570920
