Title :
Application of non-contact C-V measurement in evaluation of ion implantation induced wafer charging
Author :
Ko, Sungyeon ; Kohno, M.
Abstract :
Ion implant induced wafer charging has been studied by a using noncontact C-V method in a metal-air-oxide-silicon (MAOS) structure. The effects of implant energy and PFG arc current on the oxide charging were examined. From the quantitative characterization of the oxide charging in terms of the total oxide charge, the oxide charging was observed to decrease by using PFG. It increases dramatically as the PFG arc current goes below 1 A. Increasing the PFG arc current above 1 A has little effects on oxide charging.
Keywords :
MIS structures; ion implantation; semiconductor doping; surface charging; 1 A; implant energy; metal-air-oxide-silicon structure; noncontact C-V measurement; oxide charging; total oxide charge; Capacitance-voltage characteristics; Implants; Ion implantation; Monitoring; Optical sensors; Particle beam optics; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Voltage;
Conference_Titel :
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location :
Taos, New Mexico, USA
Print_ISBN :
0-7803-7155-0
DOI :
10.1109/IIT.2002.1257997
