DocumentCode
2461358
Title
Application of non-contact C-V measurement in evaluation of ion implantation induced wafer charging
Author
Ko, Sungyeon ; Kohno, M.
fYear
2002
fDate
27-27 Sept. 2002
Firstpage
295
Lastpage
298
Abstract
Ion implant induced wafer charging has been studied by a using noncontact C-V method in a metal-air-oxide-silicon (MAOS) structure. The effects of implant energy and PFG arc current on the oxide charging were examined. From the quantitative characterization of the oxide charging in terms of the total oxide charge, the oxide charging was observed to decrease by using PFG. It increases dramatically as the PFG arc current goes below 1 A. Increasing the PFG arc current above 1 A has little effects on oxide charging.
Keywords
MIS structures; ion implantation; semiconductor doping; surface charging; 1 A; implant energy; metal-air-oxide-silicon structure; noncontact C-V measurement; oxide charging; total oxide charge; Capacitance-voltage characteristics; Implants; Ion implantation; Monitoring; Optical sensors; Particle beam optics; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Conference_Location
Taos, New Mexico, USA
Print_ISBN
0-7803-7155-0
Type
conf
DOI
10.1109/IIT.2002.1257997
Filename
1257997
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