Title :
Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches
Author :
Hyun-Ho Yang ; Yahiaoui, Achref ; Zareie, Hosein ; Blondy, Pierre ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 Ω at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 108 Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems.
Keywords :
UHF devices; electrical contacts; microswitches; microwave switches; reliability; 3G system; 4G system; CMOS Si-on-insulator switch; SP11T switch; SP7T switch; cold-switched reliability testing; frequency 0.1 GHz to 10 GHz; gain 50 dB to 17 dB; loss 0.3 dB to 1.7 dB; power 0.1 W to 1 W; power handling capability; radiofrequency microelectromechanical system switch; resistance 4.5 ohm to 2.5 ohm; simulated contact contamination; single-pole multiple-throw RF MEMS switch; stress gradient effect; symmetric circular switch topology; time 7 mus to 10 mus; voltage 75 V to 100 V; Analytical models; Contacts; Force; Manganese; Radio frequency; Springs; Stress; Radio frequency microelectromechanical systems (RF MEMS); contact switch; electrostatic relay; metal-contact; switching networks;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2014.2344694